STB12NM50ND_09 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

STB12NM50ND
STD12NM50ND, STF12NM50ND
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET
(with fast diode) in D²PAK, DPAK, TO-220FP
Features
Type
V_DSS (@Tjmax) R_DS(on) max I_D
STB12NM50ND
550 V
0.38 Ω 11 A
STD12NM50ND 550 V
0.38 Ω 11 A
STF12NM50ND
550 V
0.38 Ω 11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
FDmesh™ technology combines the MDmesh™
features with an intrinsic fast-recovery body
diode. The resulting product has reduced on-
resistance and fast switching commutations,
making it especially suitable for bridge topologies
where low t_rr is required.
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
Marking
STB12NM50ND
STD12NM50ND
STF12NM50ND
12NM50ND
12NM50ND
12NM50ND
3
!-V
Package
D²PAK
DPAK
TO-220FP
Packaging
Tape and reel
Tape and reel
Tube
June 2009
Doc ID 14936 Rev 2
1/16
www.st.com
16