STB12NM50ND_09 Datasheet, PDF (8/16 Pages) STMicroelectronics – N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

Electrical characteristics
STB12NM50ND, STD12NM50ND, STF12NM50ND
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM03993v1
RDS(on)
(norm)
2.0
1.9
AM03394v1
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.9
0.7
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B_VDSS vs temperature
VSD
(V)
1.2
TJ=-50°C
AM03996v1
BVDSS
(norm)
1.07
AM03995v1
1.0
0.8
0.6
0.4
0.2
0
0
TJ=150°C
TJ=25°C
10 20 30 40 50 ISD(A)
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0
25 50 75 100 TJ(°C)
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Doc ID 14936 Rev 2