STB12NM50ND_09 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

STB12NM50ND, STD12NM50ND, STF12NM50ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
dv/dt ⁽³⁾
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T_C=25 °C)
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 11 A, di/dt ≤ 600 A/µs, V_DD = 80% V_(BR)DSS
Value
D²PAK
DPAK
500
± 25
11
6.9
44
100
TO-220FP
11 ⁽¹⁾
6.9 ⁽¹⁾
44 ⁽¹⁾
25
2500
40
-55 to 150
150
Unit
V
V
A
A
A
W
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering
purposes
Value
D²PAK
DPAK
1.25
30
50
Unit
TO-220FP
5
°C/W
°C/W
62.5
°C/W
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)}
Max value
Unit
5
A
350
mJ
Doc ID 14936 Rev 2
3/16