STB12NM50ND_09 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

STB12NM50ND, STD12NM50ND, STF12NM50ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 5.5 A,
R_G = 4.7 Ω, V_GS = 10 V
Figure 18
Min. Typ. Max. Unit
12
ns
15
ns
-
-
40
ns
17
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 11 A, V_GS=0
11 A
-
44 A
-
1.6 V
t_rr
Reverse recovery time
I_SD = 11 A, di/dt =100 A/µs,
122
ns
Q_rr Reverse recovery charge
V_DD = 100 V
- 650
nC
I_RRM Reverse recovery current
Figure 20
11
A
t_rr
Reverse recovery time
V_DD = 100 V
160
ns
Q_rr Reverse recovery charge
di/dt =100 A/µs, I_SD = 11 A ^{- 940}
nC
I_RRM Reverse recovery current
Tj = 150 °C, Figure 20
12
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 14936 Rev 2
5/16