PD57006-E_10 Datasheet, PDF (9/22 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD57006-E, PD57006S-E
Figure 14. Output power vs
gate-source voltage
9
8
925 MHz
7
6
5
960 MHz
4
3
945 MHz
2
1
Vdd=28V
Pin= 23.6 dBm
0
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Typical performance
4.2
PD5706S-E
Figure 15. Output power vs input power
Figure 16. Input return loss vs output power
9
0
8
925 MHz
Vdd=28V
7
-5 Idq=70mA
960 MHz
6
5
945 MHz
4
-10
925 MHz
945 MHz
-15
3
2
Vdd=28V
Idq=70mA
-20
960 MHz
1
0
-25
0
0.1
0.2
0.3
0.4
0 12 34 5 67 8 9
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Doc ID 12611 Rev 2
9/22