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| PD57006-E_10 Datasheet, PDF (4/22 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs | |||
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Electrical characteristics
2
Electrical characteristics
PD57006-E, PD57006S-E
2.1
TCASE = +25 oC
Static
Table 4. Static
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
ID = 10 mA
VDS = 28 V
VDS = 0 V
ID = 70 mA
ID = 0.5 A
ID = 800 mA
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
65
1 μA
1 μA
2.0
5.0 V
0.9 V
0.58
mho
27
pF
14
pF
0.9
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min Typ Max Unit
POUT VDD = 28 V IDQ = 70 mA
f = 945 MHz 6
GP
VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 14 15
ηD
VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 45 50
Load VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 10:1
mismatch All phase angles
W
dB
%
VSWR
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
4/22
Doc ID 12611 Rev 2
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