PD57006-E_10 Datasheet, PDF (7/22 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD57006-E, PD57006S-E
4.1
PD57006-E
Figure 6. Output power vs input power
Typical performance
Figure 7. Input return loss vs output power
9
0
8
925 MHz
7
-5
6
945 MHz
945 MHz
5
960 MHz
-10
960 MHz
4
3
-15
925 MHz
2
Vdd=28V
Idq=70mA
-20
Vdd=28V
1
Idq=70mA
0
-25
0
0.1
0.2
0.3
0.4
0123456789
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Figure 8. Power gain vs output power
Figure 9. Drain efficiency vs output power
18
16
925 MHz
14
945 MHz
12
960 MHz
10
8
Vdd=28V
Idq=70mA
6
4
0 123456789
Pout, OUTPUT POWER (W)
60
50
40
30
945 MHz
925 MHz
960 MHz
20
Vdd=28V
Idq=70mA
10
0 123456789
Pout, OUTPUT POWER (W)
Doc ID 12611 Rev 2
7/22