PD57006-E_10 Datasheet, PDF (6/22 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD57006-E, PD57006S-E
Figure 3. Capacitance vs supply voltage
Figure 4. Drain current vs
gate source voltage
100
Ciss
10
Coss
1
f=1MHz
0.1
0
4
Crss
8
12 16 20 24 28
VDD, DRAIN VOLTAGE (V)
Figure 5. Gate-source voltage vs
case temperature
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-25
Id=1.5 A
Id=1 A
Id=.6 A
Id=.2 A
Vds=10 V
Id=.05 A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
6/22
Doc ID 12611 Rev 2