PD57006-E_10 Datasheet, PDF (1/22 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD57006-E
PD57006S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 6 W with 15dB gain @ 945 MHz / 28 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. Device’s
superior linearity performance makes it an ideal
solution for car mobile radio. The PowerSO-10
plastic package, designed to offer high reliability,
is the first ST JEDEC approved, high power SMD
package. It has been specially optimized for RF
needs and offers excellent RF performances and
ease of assembly. Mounting recommendations
are available in www.st.com/rf/ (look for
application note AN1294).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD57006-E
PD57006S-E
PD57006TR-E
PD57006STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
May 2010
Doc ID 12611 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/22
www.st.com
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