STD9N65M2 Datasheet, PDF (8/23 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID=250µA
AM18065v1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100
TJ(°C)
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.3
2.1
1.9
1.7
ID=2.5A
VGS=10V
AM18066v1
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized V_(BR)DSS vs temperature
VSD (V)
1
0.9
0.8
0.7
0.6
0.5
1
TJ=-50°C
AM18068v1
TJ=25°C
TJ=150°C
2
3
4
ISD(A)
V(BR)DSS
(norm)
1.11
1.09
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
0.91
-50 -25
ID=1mA
AM18067v1
0 25 50 75 100 TJ(°C)
8/23
DocID025975 Rev 2