STD9N65M2 Datasheet, PDF (5/23 Pages) STMicroelectronics – Extremely low gate charge

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
V_GS = 0, I_SD = 5 A
-
5A
-
20 A
-
1.6 V
t_rr
Reverse recovery time
- 276
ns
Q_rr Reverse recovery charge
I_SD = 5 A, di/dt = 100 A/µs
-
V_DD = 60 V (see Figure 20)
1.7
µC
I_RRM Reverse recovery current
- 12.5
A
t_rr
Reverse recovery time
I_SD = 5 A, di/dt = 100 A/µs
- 312
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 1.9
µC
I_RRM Reverse recovery current
(see Figure 20)
- 12.4
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID025975 Rev 2
5/23
23