STD9N65M2 Datasheet, PDF (3/23 Pages) STMicroelectronics – Extremely low gate charge

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, TO-220,
IPAK
TO-220FP
Unit
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
V_ISO
dv/dt ⁽³⁾
dv/dt⁽⁴⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T_C=25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 5 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
4. V_DS ≤ 520 V
± 25
V
5
5⁽¹⁾
A
3.2
3.2⁽¹⁾
A
20
A
60
20
W
2500
V
15
50
- 55 to 150
150
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
2.08
50
6.25
62.5
2.08
°C/W
°C/W
100 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax)
1
A
E_AS
Single pulse avalanche energy (starting
T_j=25°C, I_D= I_AR; V_DD=50)
105
mJ
DocID025975 Rev 2
3/23
23