STD9N65M2 Datasheet, PDF (1/23 Pages) STMicroelectronics – Extremely low gate charge

STD9N65M2, STF9N65M2,
STP9N65M2, STU9N65M2
N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
TAB
3
2
1
IPAK
Features
Order codes
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
V_DS
R_DS(on)
max
I_D
650 V 0.9 Ω
5A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the devices exhibit
both low on-resistance and optimized switching
characteristics. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Order codes
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
Table 1. Device summary
Marking
Package
DPAK
9N65M2
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
July 2014
This is information on a product in full production.
DocID025975 Rev 2
1/23
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