STD4N52K3 Datasheet, PDF (8/21 Pages) STMicroelectronics – N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Electrical characteristics
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM08646v1
RDS(on)
(norm)
AM08647v1
1.1
2.5
1.0
2.0
0.9
1.5
0.8
1.0
0.7
0.6
0.5
0.5
-75 -25
25
75 125
TJ(°C)
0
-75 -25
25
75
125 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Maximum avalanche energy vs
starting Tj
VSD
(V)
AM08649v1
EAS (mJ)
AM08650v1
1.0
TJ=-50°C
120
ID=2.5 A
VDD=50 V
100
0.9
0.8
80
TJ=25°C
0.7
60
0.6
40
TJ=150°C
0.5
20
0.4
0
0.5 1
1.5 2
2.5 ISD(A)
0
0 20 40 60 80 100 120 140 TJ(°C)
8/21
Doc ID 18206 Rev 2