STD4N52K3 Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
(1)
I_SDM Source-drain current (pulsed)
2.5 A
-
10 A
(2)
V_SD Forward on voltage
I_SD = 2.5 A, V_GS = 0
-
1.6 V
t_rr Reverse recovery time
173
ns
I_SD = 2.5 A, di/dt = 100 A/μs
Q_rr Reverse recovery charge
V_DD = 60 V (see Figure 23)
- 778
nC
I_RRM Reverse recovery current
9
A
t_rr Reverse recovery time
I_SD = 2.5 A, di/dt = 100 A/μs
196
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 941
nC
I_RRM Reverse recovery current
(see Figure 23)
10
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1) ^{Gate-source breakdown}
BV_{GSO voltage}
Igs=± 1 mA (open drain)
30
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Doc ID 18206 Rev 2
5/21