STD4N52K3 Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Electrical characteristics
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on
Zero gate voltage
V_DS = 525 V
drain current (V_GS = 0) V_DS = 525 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 50 μA
Static drain-source on-
resistance
V_GS = 10 V, I_D = 1.25 A
Min. Typ. Max. Unit
525
V
1 μA
50 μA
± 10 μA
3 3.75 4.5 V
2.1 2.6 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
334
pF
-
28
- pF
5
pF
Equivalent output
(1)
C_oss(eq) capacitance time
related
V_DS = 0 to 420 V, V_GS = 0
-
20
- pF
Intrinsic gate
R_{G resistance}
f = 1 MHz open drain
-
4
-
Ω
Q_g Total gate charge
V_DD = 400 V, I_D = 2.5 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 19)
11
nC
-
2
- nC
7
nC
1. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
Table 6.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 260 V, I_D = 1.25 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min. Typ. Max Unit
8
ns
7
ns
-
-
21
ns
14
ns
4/21
Doc ID 18206 Rev 2