STD4N52K3 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(2)
I_DM Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
I_{AR repetitive (pulse width limited by Tj max)}
E_AS
(3)
dv/dt
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
525
± 30
2.5
2
10
45
1.3
110
12
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
-55 to 150
T_j Max. operating junction temperature
150
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 2.5 A, di/dt = 400 A/μs, peak V_DD ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS.
(1)
2.5
(1)
2
(1)
10
20
2500
V
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
Maximum lead temperature for soldering
T_l
purpose
62.5
300
1. When mounted on 1inch sq FR-4 board, 2 oz Cu
2.78
50
6.25
100
62.5
300
°C/W
°C/W
°C/W
°C
Doc ID 18206 Rev 2
3/21