STD4N52K3 Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STD4N52K3, STF4N52K3,
STP4N52K3, STU4N52K3
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
V_DSS
R_DS(on)
max
I_D
Pw
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W
2.5 A 20 W
(1)
2.5 A 45 W
2.5 A 45 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
Marking
4N52K3
4N52K3
4N52K3
4N52K3
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
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February 2013
This is information on a product in full production.
Doc ID 18206 Rev 2
1/21
www.st.com
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