STD13NM60ND Datasheet, PDF (8/21 Pages) STMicroelectronics – N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
Figure 14. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
ID=11 A
AM15782v1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 125 TJ(°C)
Figure 16. Normalized V_DS vs temperature
VDS
(norm)
1.08
ID=1mA
AM15781v1
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 15. Source-drain diode forward
characteristics
VSD (V)
TJ=-50°C
AM15783v1
1.2
TJ=25°C
1
0.8
TJ=150°C
0.6
0.4
0
2
4
6
8
10 ISD(A)
8/21
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