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| STD13NM60ND Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK | |||
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STD13NM60ND, STF13NM60ND,
STP13NM60ND
N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh⢠II Power MOSFET
(with fast diode) in DPAK, TO-220FP and TO-220 packages
Datasheet â production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Features
Order codes VDS @ TJmax RDS(on) max ID
STD13NM60ND
STF13NM60ND
650 V
0.38 Ω 11 A
STP13NM60ND
⢠The worldwide best RDS(on)* area among fast
recovery diode devices
⢠100% avalanche tested
⢠Low input capacitance and gate charge
⢠Low gate input resistance
⢠Extremely high dv/dt and avalanche
capabilities
' Ä7$%
Applications
⢠Switching applications
*
6
$0Y
Description
These FDmesh⢠II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmeshâ¢
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STD13NM60ND
STF13NM60ND
STP13NM60ND
Table 1. Device summary
Marking
Package
13NM60ND
DPAK
TO-220FP
TO-220
May 2013
This is information on a product in full production.
DocID024645 Rev 1
Packaging
Tape and reel
Tube
1/21
www.st.com
21
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