STD13NM60ND Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage}
I_D = 1 mA, V_GS= 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
V_DS = 600 V
V_DS = 600 V, T_C=125 °C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 μA
V_GS= 10 V, I_D= 5.5 A
Min. Typ. Max. Unit
600
V
1 μA
100 μA
±100 nA
3
4
5
V
0.32 0.38 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f =1 MHz,
V_GS = 0
- 845 - pF
- 47 - pF
- 2.5 - pF
(1) ^{Equivalent output}
C_{oss eq. capacitance}
V_GS = 0, V_DS = 0V to 480 V - 121 -
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
- 4.3 -
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480 V, I_D = 11 A
V_GS = 10 V
(see Figure 18)
- 24.5 - nC
- 4.8 - nC
- 17 - nC
1. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
4/21
DocID024645 Rev 1