STD13NM60ND Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

STD13NM60ND, STF13NM60ND, STP13NM60ND
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 300 V, I_D = 5.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min Typ Max Unit
- 46.5 - ns
- 10 - ns
- 9.6 - ns
- 15.4 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min Typ Max Unit
I_SD
(1)
I_SDM
(2)
V_SD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 11 A, V_GS=0
-
11 A
-
44 A
-
1.6 V
t_rr Reverse recovery time
- 150
I_SD =11 A, di/dt =100 A/μs,
ns
Q_rr
I_RRM
Reverse recovery charge
Reverse recovery current
V_DD = 100 V
(see Figure 19)
- 755
nC
- 12
A
t_rr Reverse recovery time
V_DD = 100 V
- 187
ns
Q_rr Reverse recovery charge
di/dt =100 A/μs, I_SD = 11 A - 1271
nC
Tj = 150 °C (see Figure 19)
I_RRM Reverse recovery current
- 13.6
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300μs, duty cycle 1.5%
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