STD13NM60ND Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

STD13NM60ND, STF13NM60ND, STP13NM60ND
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
Unit
DPAK, TO-220 TO-220FP
V_DS Drain-source voltage
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C = 100°C
(2)
I_DM
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
(3)
dv/dt Peak diode recovery voltage slope
(4)
dv/dt MOSFET dv/dt ruggedness
600
± 25
11
6.93
44
109
40
40
(1)
11
(1)
6.93
(1)
44
25
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
2500
T_stg Storage temperature
-55 to 150
T_j Max. operating junction temperature
150
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. I_SD ≤ 11 A, di/dt ≤ 400 A/μs, V_DD = 80% V_(BR)DSS, V_DS(peak) ≤ V_(BR)DSS
4. V_DS ≤ 480 V
V
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP TO-220
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-amb max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
1.15
5
1.15 °C/W
62.5
°C/W
50
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Max value
Avalanche current, repetitive or not-
I_AS
(1)
3
repetitive
E_AS
(2)
Single pulse avalanche energy
162
1. Pulse width limited by Tj max
2. starting Tj= 25 °C, I_D=I_AS, V_DD= 50 V
DocID024645 Rev 1
Unit
A
mJ
3/21