STB5N62K3 Datasheet, PDF (8/19 Pages) STMicroelectronics – N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Electrical characteristics
STB/D/F/P/U5N62K3
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM08249v1
RDS(on)
(norm)
2.5
AM08250v1
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75 -25
25
75 125
TJ(°C)
0
-75 -25
25
75 125 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B_VDSS vs temperature
VSD
(V)
1.0
0.9
TJ=-50°C
AM08597v1
BVDSS
(norm)
1.10
AM08596v1
0.8
1.05
0.7 ^TJ=25°C
0.6
0.5
TJ=150°C
1.00
0.95
0.4
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A)
0.90
-75 -25 25
75 125 TJ(°C)
Figure 18. Maximum avalanche energy vs
starting Tj
EAS (mJ)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
ID=4.2 A
VDD=50 V
AM08598v1
20 40 60 80 100 120 140 TJ(°C)
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Doc ID 17361 Rev 2