STB5N62K3 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

STB/D/F/P/U5N62K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
dv/dt⁽³⁾
di/dt⁽³⁾
Drain- source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
Diode reverse recovery current slope
V_ISO Insulation withstand voltage (AC)
T_J Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ I_D, peak V_DS ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS
Value
TO-220, DPAK
D²PAK, IPAK
TO-220FP
4.2
3
16.8
70
620
± 30
4.2 ⁽¹⁾
3 ⁽¹⁾
16.8 ⁽¹⁾
25
4.2
120
12
400
2500
- 55 to 150
Unit
V
V
A
A
A
W
A
mJ
V/ns
A/µs
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max
R_thj-amb
Thermal resistance junction-amb
max
R_thj-pcb
Thermal resistance junction-pcb
max
T_J
Maximum lead temperature for
soldering purpose
Value
Unit
TO-220 D²PAK IPAK TO-220FP DPAK
1.79
5
1.79 °C/W
62.50
62.50
°C/W
30
50 °C/W
300
300
°C/W
Doc ID 17361 Rev 2
3/19