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STB5N62K3 Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STB/D/F/P/U5N62K3
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.1 A
Min. Typ. Max. Unit
620
V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
1.28 1.6 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
680
pF
-
50
- pF
8
pF
COSS
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 496 V
16.6
pF
Rg
Gate input resistance f=1 MHz open drain
-
4
-
Ω
Qg
Total gate charge
VDD = 496 V, ID = 4.2 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
26
nC
-
4
- nC
16
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
Doc ID 17361 Rev 2
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