STB5N62K3 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

STB5N62K3, STD5N62K3, STF5N62K3
STP5N62K3, STU5N62K3
N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET
D²PAK, DPAK,TO-220FP, TO-220 and IPAK
Features
Order codes V_DSS
STB5N62K3
STD5N62K3
STF5N62K3
STP5N62K3
STU5N62K3
620 V
R_DS(on)
max.
< 1.6 Ω
I_D
P_w
70 W
4.2 A 25 W
70 W
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
Switching applications
3
2
1
TO-220
3
1
DPAK
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2)
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STB5N62K3
STD5N62K3
STF5N62K3
STP5N62K3
STU5N62K3
5N62K3
G(1)
Packages
D²PAK
DPAK
TO-220FP
TO-220
IPAK
S(3)
AM01476v1
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
October 2010
Doc ID 17361 Rev 2
1/19
www.st.com
19