STB5N62K3 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

STB/D/F/P/U5N62K3
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
V_DD = 310 V, I_D = 4.2 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19)
Min. Typ. Max Unit
12
ns
8
ns
-
-
40
ns
21
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 4.2 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4.2 A, di/dt = 100 A/µs
V_DD= 60 V
(see Figure 21)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 4.2 A, di/dt = 100 A/µs
V_DD= 60 V T_J = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4.2 A
-
16.8 A
-
1.5 V
290
ns
- 1900
nC
13
A
320
ns
- 2200
nC
14
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BV_GSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17361 Rev 2
5/19