STB30NM60N_08 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
VGS(th)
(norm)
1.1
1.05
AM00043v1
ID=250µA
1
0.95
0.9
0.85
0.8
0.75
0.7
-50 -25 0 25 50 75 100 125 T1J5(°0C)
Figure 15. Normalized on resistance vs
temperature
RDS(on)
(norm)
2.1
AM00047v1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 T1J5(°0C)
Figure 16. Source-drain diode forward
characteristics
VSD(V)
AM00050v1
1 ^TJ=-50°C
25°C
0.8
150°C
0.6
Figure 17. Normalized B_VDSS vs temperature
BVDSS
(norm)
1.07
1.05
1.03
1.01
AM00049v1
0.4
0.2
0
0
0.99
0.97
0.95
0.93
10
20
ISD(A)
-50 -25 0 25 50 75 100 125 T1J(5°0C)
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