STB30NM60N_08 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 12.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min. Typ. Max Unit
20
ns
24
ns
125
ns
70
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 25 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 25 A, di/dt = 100 A/µs
V_DD= 100 V (see Figure 23)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 25 A, di/dt = 100 A/µs
V_DD= 100 V Tj = 150°C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
25 A
100 A
1.3 V
540
ns
10
µC
36
A
630
ns
12
µC
36
A
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