STB30NM60N_08 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

STB30NM60N,STI30NM60N,STF30NM60N
STP30NM60N, STW30NM60N
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, TO-247, D²PAK, I²PAK
Features
Type
V_{DSS @}
T_Jmax
STB30NM60N 650 V
STI30NM60N 650 V
STF30NM60N 650 V
STP30NM60N 650 V
STW30NM60N 650 V
R_DS(on)
max
<0.13Ω
<0.13Ω
<0.13Ω
<0.13Ω
<0.13Ω
I_D
25A
25A
25A⁽¹⁾
25A
25A
P_W
190 W
190 W
40 W
190 W
190 W
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
1
D²PAK
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB30NM60N
STI30NM60N
STF30NM60N
STP30NM60N
STW30NM60N
Marking
30NM60N
30NM60N
30NM60N
30NM60N
30NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
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July 2008
Rev 2
1/18
www.st.com
18