STB30NM60N_08 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on
Zero gate voltage
V_DS = Max rating
drain current (V_GS = 0) V_DS = Max rating, T_C=125°C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source on
resistance
V_GS = 10 V, I_D = 12.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
100 nA
2
3
4
V
0.1 0.13 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15 V, I_D = 12.5 A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz, V_GS = 0
C_{oss eq.} Equivalent Output
capacitance
V_GS = 0, V_DS = 0 to 480 V
f=1MHz Gate DC Bias=0
R_g
Gate input resistance Test signal level=20 mV
open drain
Q_g
Total gate charge
V_DD =480 V, I_D = 25 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 19)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Typ.
25
2700
210
22
66
3
91
14
50
Max. Unit
S
pF
pF
pF
pF
Ω
nC
nC
nC
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