STB30NM60N_08 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
TO-220
I²PA
K
TO-247 D²PAK TO-220FP
Unit
V_DS Drain-source voltage (V_GS=0)
600
V
V_GS Gate-source voltage
± 30
V
Drain current (continuous) at
I_D
T_C = 25 °C
25
25 ⁽¹⁾
A
Drain current (continuous) at
I_D
T_C = 100 °C
15.8
15.8⁽¹⁾
A
I_DM ⁽²⁾ Drain current (pulsed)
100
100 ⁽¹⁾
A
P_TOT Total dissipation at T_C = 25 °C
190
40
W
dv/dt ^{(3) Peak diode recovery voltage slope}
15
V/ns
V_ISO
T_stg
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;T_C=25 °C)
Storage temperature
--
-55 to 150
2500
V
°C
T_j Max. operating juncion temperature
150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 25A, di/dt ≤ 400A/µs, V_DD =80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
TO-220 I²PAK TO-247 D²PAK TO-220FP Unit
R_thj-case
Thermal resistance junction-case
max
R_thj-pcb
Thermal resistance junction-pcb
max
R_thj-amb
Thermal resistance junction-amb
max
T_l
Maximum lead temperature for
soldering purposes
0.66
--
--
--
30
62.5
50
--
300
3.1 °C/W
--
°C/W
62.5 °C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
I_AR
Avalanche current, repetitive or not-repetitive (pulse
width limited by T_j max)
12
A
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
900
mJ
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