STB24N60DM2 Datasheet, PDF (8/21 Pages) STMicroelectronics – N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Electrical characteristics
STB24N60DM2, STP24N60DM2, STW24N60DM2
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized V_(BR)DSS vs temperature
VSD
(V)
1.4
1.2
1
AM15468v1
TJ=-50°C
V(BR)DSS
(norm)
1.11
1.09
1.07
1.05
ID = 1mA
AM15466v1
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0 2 4 6 8 10 12 14 16 ISD(A)
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0
25 50 75 100 TJ(°C)
8/21
DocID025499 Rev 3