STB24N60DM2 Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STB24N60DM2, STP24N60DM2, STW24N60DM2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
I_SD
Source-drain current
-
(2)
I_SDM Source-drain current (pulsed)
-
(3)
V_SD Forward on voltage
I_SD = 18 A, V_GS = 0
-
18 A
72 A
1.6 V
t_rr Reverse recovery time
- 155
ns
I_SD = 18 A, di/dt = 100 A/μs
Q_rr Reverse recovery charge
V_DD = 60 V (see Figure 18)
-
956
nC
I_RRM Reverse recovery current
- 12.5
A
t_rr Reverse recovery time
- 200
I_SD = 18 A, di/dt = 100 A/μs
ns
Q_rr Reverse recovery charge V_DD = 60 V, T_j = 150 °C
- 1450
nC
I_RRM Reverse recovery current
(see Figure 18)
- 13
A
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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