STB24N60DM2 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STB24N60DM2, STP24N60DM2, STW24N60DM2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(1)
I_DM Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
(3)
dv/dt MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 18 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=400 V.
3. V_DS ≤ 480 V
± 25
18
11
72
150
40
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
D²PAK
30
Value
TO-220
0.83
62.5
Unit
TO-247
°C/W
°C/W
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not
I_{AR repetitive (pulse width limited by Tjmax )}
Single pulse avalanche energy (starting
E_{AS Tj=25°C, ID= IAR; VDD=50)}
3.5
A
180
mJ
DocID025499 Rev 3
3/21
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