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| STB24N60DM2 Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages | |||
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STB24N60DM2, STP24N60DM2,
STW24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus⢠low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet â production data
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes
STB24N60DM2
STP24N60DM2
STW24N60DM2
VDS @
TJmax
650 V
RDS(on)
max
ID
0.20 Ω 18 A
⢠Extremely low gate charge and input
capacitance
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener-protected
⢠Extremely high dv/dt and avalanche
capabilities
Applications
G(1)
⢠Switching applications
Description
These FDmesh II Plus⢠low Qg Power MOSFETs
with intrinsic fast-recovery body diode are
produced using a new generation of MDmeshâ¢
S(3)
AM01476v1
technology: MDmesh II Plus⢠low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters and
ideal for bridge topologies and ZVS phase-shift
converters.
Order codes
STB24N60DM2
STP24N60DM2
STW24N60DM2
Table 1. Device summary
Marking
Package
2
D PAK
24N60DM2
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2014
This is information on a product in full production.
DocID025499 Rev 3
1/21
www.st.com
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