STB20N65M5 Datasheet, PDF (8/21 Pages) STMicroelectronics – N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 14. Normalized B_VDSS vs temperature Figure 15. Drain-source diode forward
characteristics
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
VSD
(V)
TJ=-50°C
1.2
1.0
AM05461v1
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
Figure 16. Switching losses vs gate resistance
(1)
E (μJ)
250
VDD=400V
VGS=10V
ID=12A
AM15593v1
Eon
200
150
Eoff
100
50
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode
RG(Ω)
8/21
Doc ID 022865 Rev 2