STB20N65M5 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ⁽¹⁾ Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. I_SD ≤ 18 A, di/dt ≤400 A/µs; V_DS peak < V_(BR)DSS, V_DD=400 V
Value
± 25
18
11.3
72
130
15
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
D²PAK
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb(1) Thermal resistance junction-pcb max
30
1. When mounted on 1 inch² FR-4, 1 Oz copper board.
Value
I²PAK,
TO-220
0.96
62.5
Unit
TO-247
°C/W
50
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetetive or not
repetetive (pulse width limited by T_jmax )
E_AS
Single pulse avalanche energy (starting
t_j=25°C, I_d= I_AR; V_dd=50 V)
Value
Unit
4
A
270
mJ
Doc ID 022865 Rev 2
3/21