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STB20N65M5 Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK
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Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 9 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
± 100 nA
3
4
5
V
0.160 0.19 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1434
pF
-
38
- pF
3.7
pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
-
118
- pF
-
35
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg Total gate charge
VDD = 520 V, ID = 9 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
36
nC
-
7.5
- nC
18
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/21
Doc ID 022865 Rev 2
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