STB20N65M5 Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

STB20N65M5, STI20N65M5,
STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
V_DS @
T_Jmax
R_DS(on)
max
I_D
710 V 0.19 Ω 18 A
■ Worldwide best R_DS(on) * area
■ Higher V_DSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
2
3
1
D²PAK
TAB
TAB
12³
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
Marking
20N65M5
Package
D²PAK
I²PAK
TO-220
TO-247
February 2013
This is information on a product in full production.
Doc ID 022865 Rev 2
Packaging
Tape and reel
Tube
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