STB20N65M5 Datasheet, PDF (7/21 Pages) STMicroelectronics – N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V) _VDS
12
10
8
6
4
VDD=520V
ID=9A
AM15589v1
VDS
(V)
500
400
300
200
RDS(on)
(Ω)
0.195
0.185
0.175
0.165
0.155
0.145
VGS=10V
AM15590v1
2
100
0.135
0
0
0
10
20
30 40 Qg(nC)
0.125
0
5
10
15 ID(A)
Figure 10. Capacitance variations
C
(pF)
10000
1000
100
10
1
0.1
1
10
100
Figure 11. Output capacitance stored energy
AM15591v1
Eoss
(µJ)
7
AM15592v1
6
Ciss
5
4
3
Coss
2
Crss
VDS(V)
1
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM05459v1
ID = 250 µA
VD_S = VG_S
RDS(on)
(norm)
2.1
1.9
1.7
VG_S= 10V
ID= 9 A
AM05460v1
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Doc ID 022865 Rev 2
7/21