STB150N3LH6 Datasheet, PDF (8/15 Pages) STMicroelectronics – Switching applications

Test circuits
3
Test circuits
STB150N3LH6
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
RL
2200
3.3
µF
µF _VDD
IG=CONST
VD
Vi=20V=VGMAX
100Ω
D.U.T.
VGS
RG
t(s) ^PW
D.U.T.
2200
µF
2.7kΩ
VG
47kΩ
uc _PW
rod ^AM01468v1
1kΩ
AM01469v1
P _{Figure 15. Test circuit for inductive load}
Figure 16. Unclamped Inductive load test
te ^{switching and diode recovery times}
circuit
Obsole _G
t(s) ^{- 25Ω}
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
uc ^RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
rod _Pw
P _AM01470v1
AM01471v1
lete ^{Figure 17. Unclamped inductive waveform}
so ^V(BR)DSS
Ob ^VD
Figure 18. Switching time waveform
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
8/15
Doc ID 023351 Rev 1