STB150N3LH6 Datasheet, PDF (7/15 Pages) STMicroelectronics – Switching applications

STB150N3LH6
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
12
VDD=15V
ID=80A
AM09106v1
C
(pF)
10
AM09107v1
Ciss
8
1000
6
Coss
Crss
4
2
t(s) ⁰
0
20
40
60
80
Qg(nC)
100
0
5 10 15 20 25 VDS(V)
uc _{Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs}
d _{vs temperature}
temperature
ro _VGS(th)
P _(norm)
te 1.2
ole ^1.0
AM09108v1
RDS(on)
(norm)
2.0
1.8
1.6
VGS=10V
ID=40A
AM09109v1
bs _0.8
1.4
- ^O 0.6
1.2
) _1.0
t(s ^0.4
0.8
c _0.2
0.6
du ₀
ro ^{-75 -25}
25 75 125 TJ(°C)
0.4
-75 -25
25
75 125 TJ(°C)
P _{Figure 12. Source-drain diode forward}
techaracteristics
le_VSD
o_(V)
Obs ^1.0
AM09110v1
TJ=-55°C
0.9
TJ=25°C
0.8
0.7
TJ=175°C
0.6
0.5
0.4
0 10 20 30 40 50 60 70 80 ISD(A)
Doc ID 023351 Rev 1
7/15