STB150N3LH6 Datasheet, PDF (3/15 Pages) STMicroelectronics – Switching applications

STB150N3LH6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS Drain-source voltage (V_GS = 0)
30
V
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
± 20
V
80
A
I_D
Drain current (continuous) at T_C = 100 °C
80
A
I_DM ⁽²⁾ Drain current (pulsed)
t(s) ^{PTOT Total dissipation at TC = 25 °C}
c T_stg Storage temperature
du ^Tj
Operating junction temperature
ro ^{1. Limited by wire bonding.}
P 2. Pulse width limited by safe operating area.
olete Table 3. Thermal resistance
bs Symbol
Parameter
O _{Rthj-case Thermal resistance junction-case max}
) ^- R_thj-pcb(1) Thermal resistance junction-pcb max
t(s ^{1. When mounted on 1 inch2 oz Cu board.}
roduc ^{Table 4. Thermal resistance}
P _Symbol
Parameter
te_IAV
ole E_AS ⁽¹⁾
Not-repetitive avalanche current
Single pulse avalanche energy
Obs ^{1. Starting Tj = 25°C, ID = 40 A, VDD = 25 V}
320
A
110
W
°C
-55 to 175
°C
Value
1.36
35
Unit
°C/W
°C/W
Value
Unit
40
A
525
mJ
Doc ID 023351 Rev 1
3/15