STB150N3LH6 Datasheet, PDF (4/15 Pages) STMicroelectronics – Switching applications

Electrical characteristics
2
Electrical characteristics
STB150N3LH6
(T_CASE = 25 °C unless otherwise specified).
Table 5. Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage (V_GS= 0)
I_D = 250 µA
30
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = 30 V
V_DS = 30 V,T c = 125 °C
t(s) ^IGSS
Gate body leakage current
(V_DS = 0)
V_GS = ± 20 V
c _{VGS(th) Gate threshold voltage}
V_DS = V_GS, I_D = 250 µA
1
rodu ^RDS(on)
Static drain-source on-
resistance
V_GS = 10 V, I_D = 40 A
V_GS = 5 V, I_D = 40 A
1 µA
10 µA
±100 nA
2.5 V
2.4 3.0 mΩ
3.2 4.0 mΩ
lete ^P _{Table 6. Dynamic}
so _Symbol
Parameter
Ob _Ciss
) ^{- Coss}
t(s ^Crss
c _Qg
du ^Qgs
ro ^Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
te ^{P RG Gate input resistance}
Test conditions
Min. Typ. Max. Unit
V_DS = 25 V, f=1 MHz,
V_GS = 0
3800
pF
-
725
- pF
420
pF
V_DD = 15 V, I_D = 80 A
V_GS = 10 V
(see Figure 14)
80
nC
-
15
- nC
15
nC
f = 1 MHz gate bias bias =
0 test signal level = 20
-
1.5
-
Ω
mV open drain
Obsole^{Table 7. Switching on/off (inductive load)}
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD = 15 V, I_D = 40 A,
15
ns
R_G = 4.7 Ω, V_GS = 10 V
-
85
-
ns
(see Figure 15)
V_DD = 15 V, I_D = 40 A,
100
ns
R_G = 4.7 Ω, V_GS = 10 V
-
40
-
ns
(see Figure 15)
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Doc ID 023351 Rev 1