STB150N3LH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – Switching applications

STB150N3LH6
N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET™ VI DeepGATE™
Power MOSFET in D²PAK package
Datasheet — production data
Features
Order code
V_DSS
R_DS(on)
max
I_D(1)
P_TOT
STB150N3LH6 30 V 3.0 mΩ
t(s) ^{1. Current limited by package.}
c _{■ 100% avalanche tested}
du ■ Logic level drive
80 A 110 W
Pro _Applications
te _{■ Switching applications}
sole Description
Ob ^{This device is an N-channel Power MOSFET}
- developed using the 6^th generation of STripFET™
) DeepGATE™ technology, with a new gate
t(s ^{structure. The resulting Power MOSFET exhibits}
c ^{the lowest R}DS(on) ^{in all packages.}
D²PAK
Figure 1. Internal schematic diagram
$4!"OR
Produ _'
olete _3
Obs ^!-V
Table 1. Device summary
Order code
STB150N3LH6
Marking
150N3LH6
Package
D²PAK
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023351 Rev 1
1/15
www.st.com
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