STAP85025S Datasheet, PDF (8/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Typical performance
STAP85025S
Figure 10. Pout and drain current vs. supply
voltage (P_in = 0.4 W)
30
3
25
Pout Id
2.5
20
2
15
1.5
Freq = 870 MHz
10
Idq = 300mA
1
Pin = 0.4W
5
0.5
0
0
7
10
13
16
19
Vdd (V)
Figure 11. Pout and drain current vs. supply
voltage (P_in = 1 W)
40
4
35
Pout Id
3.5
30
3
25
2.5
20
2
15
Freq = 870 MHz
1.5
Idq = 300mA
10
Pin = 1W
1
5
0.5
0
0
7
10
13
16
19
Vdd (V)
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DocID15795 Rev 5