STAP85025S Datasheet, PDF (7/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STAP85025S
Figure 6. DC output characteristics
(T_amb = 60 °C)
6
Tamb = + 60 °C
5
4
3
2
1
0
0
2
4
6
8
10
12
V D S[ V ]
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Typical performance
Figure 7. Gain vs. output power and
bias current
20
19
Idq = 100mA Idq = 200mA Idq = 300mA
18
17
16
15
14
13
Freq = 870 MHz
12
Vdd = 13.6V
11
10
0
5
10
15
20
25
30
35
O^Inu^pt^up^tu^pot ^wp^eo^rw^(Wer⁾ (W)
Figure 8. Output power and efficiency vs. input Figure 9. Output power and drain current vs.
power
gate voltage
40
35
30
25
20
15
10
5
0
0.0
80
70
60
50
40
Freq = 870 MHz
30
Vdd = 13.6V
Idq = 300 mA
20
Pout
Eff
10
0
0.5
1.0
1.5
2.0
2.5
Input power (W)
32
28 ^{Freq = 870MHz}
Pin = 0.4W
24 Idq = 300mA
20
16
12
8
4
0
0
1
2
3
Vgs (V)
Pout Id
4
5
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
6
DocID15795 Rev 5
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