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STAP85025S Datasheet, PDF (4/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Electrical characteristics
2
Electrical characteristics
STAP85025S
2.1
2.2
TCASE = +25 °C
Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 5 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Table 4. Static
Test conditions
Min. Typ. Max. Unit
VDS = 25 V
VDS = 0 V
ID = 300 mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
-
f = 1 MHz
f = 1 MHz
f = 1 MHz
1 µA
1 µA
4.1
V
0.27 0.31 V
55
pF
40
pF
1.5
pF
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P3dB
GP
hD
Load
mismatch
VDD = 13.6 V, IDQ = 300 mA, f = 870 MHz
VDD = 13.6 V, IDQ = 300 mA, POUT = 10 W, f = 870 MHz
VDD = 13.6 V, IDQ = 300 mA, POUT = P3dB, f = 870 MHz
VDD = 17 V, IDQ = 300 mA, POUT = 45 W, f = 870 MHz
all phase angles
25
15
60
20:1
30
17.3
66
W
-
dB
%
VSWR
2.3
ESD protection characteristics
Table 6. ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
4/13
DocID15795 Rev 5
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